au.\*:("MATTHAI, C. C")
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Bonding and dipoles at semiconductor interfacesMATTHAI, C. C.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1994, Vol 69, Num 5, pp 941-944, issn 0958-6644Article
Calculation of defect migration energies using molecular dynamics = Calcul des énergies de migration de défaut par dynamique moléculaireMATTHAI, C. C.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1985, Vol 52, Num 3, pp 305-308, issn 0141-8610Article
Electronic structure of InGaAs and band offsets in InGaAs/GaAs superlatticesOLOUMI, M; MATTHAI, C. C.Journal of physics. Condensed matter (Print). 1991, Vol 3, Num 50, pp 9981-9987, issn 0953-8984Article
Study of the electronic structure and band offsets of the GaSb/inAs systemOLOUMI, M; MATTHAI, C. C.Semiconductor science and technology. 1990, Vol 5, Num 9, pp 947-951, issn 0268-1242, 5 p.Article
Computer simulation of metal-semiconductor and semiconductor-semiconductor interfacesMATTHAI, C. C; ASHU, P.Journal de physique. Colloques. 1990, Vol 1, pp C1.873-C1.878, issn 0449-1947Conference Paper
Electronic structure and band discontinuities in the InAs/GaAs systemOLOUMI, M; MATTHAI, C. C.Journal of physics. Condensed matter (Print). 1990, Vol 2, Num 23, pp 5153-5160, issn 0953-8984, 8 p.Article
A molecular dyamics study of the critical thickness of Ge layers on Si substratesASHU, P; MATTHAI, C. C.Applied surface science. 1991, Vol 48-49, pp 39-43, issn 0169-4332, 5 p.Conference Paper
A representation of the energy gap in diamond-structure semiconductorsMARCH, N. H; MATTHAI, C. C.Philosophical magazine letters. 2004, Vol 84, Num 5, pp 335-340, issn 0950-0839, 6 p.Article
Calculation of the electronic structure and the linear optical response of the Sb- and Sn-Si(111)√3 × √3 surfacesANYELE, H. T; MATTHAI, C. C.Journal of physics. Condensed matter (Print). 1996, Vol 8, Num 36, pp 6585-6596, issn 0953-8984Article
Pressure dependence of the Schottky barrier height at the nickel-silicide/silicon interfaceSHEN, T.-H; MATTHAI, C. C.Journal of physics. Condensed matter (Print). 1991, Vol 3, Num 5, pp 613-615, issn 0953-8984, 3 p.Article
The electronic stucture of Si(100) and As/Si(100) surfacesSHEN, T.-H; MATTHAI, C. C.Journal of physics. Condensed matter (Print). 1991, Vol 3, Num 32, pp 6169-6172, issn 0953-8984Article
Electronic structure of the Si6/(Si0.5Ge0.5)6 001 superlatticesBASS, J. M; MATTHAI, C. C.Semiconductor science and technology. 1991, Vol 6, Num 2, pp 109-111, issn 0268-1242, 3 p.Article
Relaxed vacancy formation and surface energies in b.c.c. transition metals = Formation de lacune relaxée et énergies de surface dans les métaux de transition c.cMATTHAI, C. C; BACON, D. J.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1985, Vol 52, Num 1, pp 1-3, issn 0141-8610Article
Aspects of reflectance anisotropy spectroscopy from semiconductor surfacesSOBIESIERSKI, Z; WESTWOOD, D. I; MATTHAI, C. C et al.Journal of physics. Condensed matter (Print). 1998, Vol 10, Num 1, pp 1-43, issn 0953-8984Article
A strain-dependent study of the [001] Si6Ge6 superlatticeBASS, J. M; MATTHAI, C. C.Semiconductor science and technology. 1990, Vol 5, Num 7, pp 707-709, issn 0268-1242, 3 p.Article
Electronic structure of [111] Si/Ge superlatticesBASS, J. M; MATTHAI, C. C.Journal of physics. Condensed matter (Print). 1990, Vol 2, Num 38, pp 7841-7846, issn 0953-8984, 6 p.Article
The Schottky barrier height at the CoSi2/Si(111) interfaceREES, N. V; MATTHAI, C. C.Journal of physics. C. Solid state physics. 1988, Vol 21, Num 27, pp L981-L984, issn 0022-3719Article
Cleavage force as a function of separation in a finite model of silicon with a chemically bonded force fieldMATTHAI, C. C; MARCH, N. H.The Journal of physics and chemistry of solids. 1997, Vol 58, Num 5, pp 765-767, issn 0022-3697Article
The effect of metal layers on the band offsets at the silicon-germanium interfaceBASS, J. M; MATTHAI, C. C.Semiconductor science and technology. 1991, Vol 6, Num 1, pp 69-70, issn 0268-1242, 2 p.Article
Dynamics of atoms on silicon substratesASHU, P; MATTHAI, C. C; SHEN, T.-H et al.Surface science. 1991, Vol 251-52, pp 955-959, issn 0039-6028, 5 p.Conference Paper
A method for determining band offsets in semiconductor superlattices and interfacesBASS, J. M; OLOUMI, M; MATTHAI, C. C et al.Journal of physics. Condensed matter (Print). 1989, Vol 1, Num 51, pp 10625-10628, issn 0953-8984, 4 p.Article
On the pressure dependence of the melting temperature and the monovacancy formation energy in transition metalsMATTHAI, C. C; MARCH, N. H.Philosophical magazine letters. 2007, Vol 87, Num 7, pp 475-482, issn 0950-0839, 8 p.Article
The Schottky barrier height at the NiSi2-Si(111) interfaceREES, N. V; MATTHAI, C. C.Semiconductor science and technology. 1989, Vol 4, Num 5, pp 412-415, issn 0268-1242, 4 p.Article
The linear optical response of reconstructed Sn/Si(111) surfacesANYELE, H. T; SHEN, T.-H; MATTHAI, C. C et al.Journal of physics. Condensed matter (Print). 1996, Vol 8, Num 23, pp 4139-4144, issn 0953-8984Article
Electronic structure of the Si6/Ge6(111) superlattice strained to a Ge substrateBASS, J. M; MATTHAI, C. C; MILMAN, V et al.Semiconductor science and technology. 1993, Vol 8, Num 12, pp 2121-2124, issn 0268-1242Article
